 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) *Wide Area of Safe Operation APPLICATIONS *Power amplifier applications *Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i VALUE -160 -160 -5 -12 -20 120 UNIT .cn mi e V V V A A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3.5 W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1419 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -1.8 V VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -50 A IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 A hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-2 Classifications Q 60-120 S w w P 100-200 scs .i w IC= -1A; VCE= -5V IC= -8A; VCE= -5V .cn mi e 20 60 20 200 80-160 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SB1419
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |